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In the last few years the need and demand for utilizing clean energy resources has increased dramatically. Energy received from sun in the form of light is a sustainable, reliable and renewable energy resource. This light energy can be transformed into electricity using solar cells (SCs). Silicon was early used and still as first material for SCs …Web
In this study, we suggest the silicon-germanium (Si-Ge) films as the photo-blocking layers in a-IGZO based TFTs. According to preceding research, ultraviolet (UV) absorbance is increased in the Si ...Web
We have optimized the deposition conditions of amorphous silicon-germanium films with embedded nanocrystals in a plasma enhanced chemical vapor deposition (PECVD) reactor, working at a standard frequency of 13.56 MHz. The objective was to produce films with very large Temperature Coefficient of Resistance (TCR), …Web
In a state-of-the-art technology, silicon is the main material for manufacturing semiconductor structures, however, for some applications, germanium …Web
Abstract: In this article, the results of investigation of processes occurring during the molecular-beam deposition of germanium layers on Si$_3$N$_4$ dielectric …Web
Among the synthesis methods for Ge, SPC has been considerably advanced in recent years, which provided an increased grain size of poly-Ge by heat deposition of …Web
1.1. Locus of silicon–germanium in the semiconductor table Silicon–germanium (Si–Ge) is now a well-accepted semiconductor, which hit a peak in its production in the 1990s. However, this semiconductor did not become a success overnight. The discovery of the combination of silicon and germanium was coincidental. 13 1.2. Historical sketchWeb
We have researched on the formation of crystalline silicon-germanium (c-SiGe) films as a new material for bottom cells of silicon-based multi-junction solar cells. We conducted solid phase crystallization (SPC) from amorphous SiGe (a-SiGe) precursors with 80–70% Ge fraction deposited on n-type [100] single crystalline silicon (c-Si) substrates.Web
We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed …Web
Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates. We have grown device …Web
CPW resonators on amorphous germanium films deposited at room temperature have single-photon loss tangents tan δ eff of 4–5 × 10 −6, and CPW resonators on 9 µm thick high-purity CVD homoepitaxial silicon films have single-photon loss tangents tan δ eff of 4–14 × 10 −6. Interface losses presumably dominate the resonator …Web
In order to address the challenges of developing Ge devices on Si substrates, this paper investigates the viability of direct Ge-on-Si heteroepitaxy via solid source molecular beam epitaxy (MBE).By studying the carrier transport properties, oxide-semiconductor heterointerface characteristics, and structural defects inherent to the as …Web
In thin-film transistor technologies [22.71, 22.72, 22.73], polycrystalline silicon-germanium is compatible with the low-thermal-budget processing that is needed to produce thin-film devices for large-area electronics. The key physical property of polycrystalline silicon-germanium that makes it attractive is its lower melting point …Web
For the infiltration of silicon or germanium into mesoporous silicas, there are mass transport and kinetic limitations that can prevent full infiltration of the nanoscopic voids and tortuous pores. ... These values are similar to those reported in the literature for porous germanium films composed of 3–4 nm nanocrystals (1.55 eV), and ...Web
That means two facts, heteroepitaxy of germanium films on bulk silicon is challenging, and germanium can be potentially used as a buffer or a substrate for III–V compound epitaxial deposition . Si and Ge are miscible to form Si 1− x Ge x alloys which consist of any molar ratio of silicon and germanium.Web
This chapter reviews the properties of silicon-germanium, beginning with the electronic properties and then progressing to the …Web
Abstract The processes of the crystallization of amorphous germanium films and multilayer germanium/silicon structures upon exposure to nanosecond (70 ns) ruby laser radiation (λ = 694 nm) are studied. The samples are grown on silicon and glassy substrates by plasma-enhanced chemical vapor deposition. Pulsed laser annealing of …Web
In addition to the Si-like silicon-germanium thin film and the nanocrystalline germanium thin film, both of which are 100 nm thick, a gas cell filled with argon is periodically moved into the beam. A full sequence, i.e., taking six spectra (pump on/off on three samples) and translating samples into the beam, takes about 8 s. ...Web
However, to date, only limited research has been focused on the applicability of either the Tauc or the Cody model to ultra-thin amorphous semiconductor films, 4,6,18–20 even as such films are becoming technologically relevant. For instance, accurate knowledge of the dielectric constants, including the imaginary part of the refractive index …Web
The deposition of thin germanium films by atmospheric pressure metal organic chemical vapor deposition at temperatures below 400 °C on substrates such as silicon wafers, float glass, and polyimide (Kapton®) using the diorganogermanes GeH 2 Cp 4M 2 and GeH 2 Cp* 2 as molecular precursors is described. The deposition rates and …Web
Germanium films were rapidly melted and solidified because of low latent heat compared with silicon films. It resulted in high crystallization velocity. 12-nm-Ge/50-nm-Si layered samples were also irradiated with laser. A decrease of the maximum electrical conductance was observed for irradiation at 130 mJ/cm 2.Web
S. Sedky et al., "Effect of In-Situ Boron Doping on Properties of Silicon Germanium Films Deposited by CVD at 400°C", Journal of Materials Research, 16 (9), p. 2607–12, September, 2001. Article CAS Google ScholarWeb
In this paper, a low temperature deposition of germanium (Ge) films on silicon (Si) is performed using Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF-PECVD). A two-step temperature technique and different GeH 4 flow rates have been employed during the deposition process.Web
The effects of the substrate (fused silica or silicon) and the composition of the films on the size of germanium nanocrystals and the fraction of the Funding for the work The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. 075-15-2020-797 (13.1902.21.0024) .Web
Leaving aside nucleation issues very specific to germanium deposition on silicon, film growth via germane is mutatis mutandis, nearly identical to silicon growth via silane, (Tomasini, 2021, Ye and Yu, 2014). ... Silicon and germanium CVD reactants and products are under mass-transfer like control. And an empirical scaling factor is ...Web
High-electron-mobility polycrystalline Ge (poly-Ge) thin films are difficult to form because of their poor crystallinity, defect-induced acceptors and low solid solubility of n-type dopants. Here ...Web
On the other hand, silicon nitride film is a high-stress material on silicon substrate because of lattice mismatch between them. ... D.D. Cannon, J.F. Liu et al., Germanium-rich silicon-germanium films epitaxially grown by ultrahigh vacuum chemical-vapor deposition directly on silicon substrates. Appl. Phys. Lett. 91, 252111 (2007)Web
In this work, we report the fabrication of amorphous silicon-germanium (a-SiGe) thin films deposited by low-frequency plasma-enhanced chemical vapor deposition (LF-PECVD) with embedded nanocrystals that have a ZT of 2.61 at room temperature. The above is achieved by enhancing the thermoelectric power factor and, simultaneously, …Web
Lateral epitaxial growth of germanium on silicon oxide. Appl. Phys. Lett. 93, 43110 ... Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass. Jpn ...Web
Abstract. This study investigates the structural and optical characteristics of Silicon Germanium (SiGe) thin films with varying compositions and annealing …Web
Silicon germanium (Si 1−x Ge x) is a material with high mobility and relatively low bandgap making it an attractive candidate for the bottom subcell in a multi-junction solar cell.Optical constants of Si 1−x Ge x films grown on silicon substrates with germanium (Ge) compositions of 77%, 82%, 85% and 88% from wavelength of 400 nm to 1450 nm …Web
The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD) system is studied.Web
Stimulated by these aspects, this work investigated the semiconductors silicon, germanium, and gallium-arsenide in the crystalline (bulk and powder) and amorphous (film) forms. The detailed ...Web
Hydrogenated amorphous silicon germanium (a-SiGe:H) is a low band gap semiconductor that can be used as active material in thin film silicon based solar cells. The direct nature of its band gap allows for the use of a very thin absorber layer and much shorter deposition times compared to microcrystalline silicon (μc Si:H).Web
Intrinsic amorphous silicon germanium (i-a-SiGe:H) films with V, U and VU shape band gap profiles for amorphous silicon germanium (a-SiGe:H) heterojunction solar cells were fabricated. The band gap profiles of i-a-SiGe:H were prepared by varying the GeH 4 and H 2 flow rates during the deposition process. The use of i-a-SiGe:H with band gap ...Web
Amorphous Si 1−x Ge x films, with a varying germanium fraction, were deposited using radio frequency (r.f.) sputtering and annealed under different conditions to form polycrystalline films. The structural properties of the films were examined using X-ray diffraction (XRD) and Raman spectroscopy. From the XRD and Raman spectra, the …Web
